Abstract
The need for higher manufacturing yields and improved operational reliability of semiconductor devices and circuits has led to a continuing scrutiny of all processing steps. Topic of the present paper is the effect of addition of chlorine or one of its compounds during silicon oxidation. After discussing oxidation kinetics in the presence of halogens and the metallurgical aspects of the process, a comprehensive review of the electrical effects is given. Attention is paid to the elimination of oxide charge centers and interface states, surface stabilization and enhanced dielectric behavior in MOS structures, and to the increased minority carrier lifetime in the silicon substrate. The improvements in device characteristics which have been attained using this method are summarized.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
