Oxidation of silicon carbide in a wet atmosphere

Abstract

The effects of water vapour on oxidation of pressureless-sintered silicon carbide containing alumina as a densifying aid were studied in a wet air flow with 10, 20, 30 and 40vol% H2O at 1300° C for 100h. The oxidation kinetics were determined in a wet air flow with 20 vol % H2O and in a dry air flow at 1300° C for times up to 360 h. The weight gain on oxidation showed an increasing tendency with increasing water vapour content. Water vapour in the atmosphere strongly influenced oxidation and accelerated the reaction. Oxidation in a wet atmosphere proceeded in a diffusion-controlled manner, in the same process as that for the dry atmosphere. No remarkable differences were noticed in the microstructure of the oxide layer and the surface roughness between the samples oxidized under the four wet conditions, but the surface roughness increased with increasing oxidation time. Water vapour evidently accelerated the devitrification of amorphous silica and promoted oxidation. Oxidation in a wet atmosphere (10 to 40 vol % H2O for 100 h and 20 vol % H2O up to 360 h) had a slight degrading effect on the flexural strength. The microstructure or surface roughness of the oxide layer formed during oxidation presumably had very little effect on the room-temperature strength.