Abstract
Planar silicon carbide-zirconium oxide composites were oxidized at temperatures between 910 and 1050 °C in oxygen, argon and CO-CO2 atmospheres. In addition, bare SiC substrates were oxidized in oxygen. The bare substrates showed parabolic oxidation kinetics. The oxidation kinetics of the composites were more difficult to interpret because of the solid state reaction between the ZrO2 and the SiO2, but were approximately parabolic.
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