Abstract
The effect of thermal treatments in nitrogen-diluted oxygen on the structural characteristics of two-dimensional arrays of Si nanocrystals (NCs) fabricated by ultralow-energy ion implantation (1 keV) in thin silicon dioxide layers is reported. The NC characteristics (size, density, and coverage) have been measured by spatially resolved electron-energy-loss spectroscopy by using the spectrum-imaging mode of a scanning transmission electron microscope. Their evolution has been studied as a function of thermal treatment duration at a temperature (900 °C) below the SiO2 viscoelastic point. An extended spherical Deal-Grove [J. Appl. Phys. 36, 3770 (1965)] model for self-limiting oxidation of embedded silicon NCs has been carried out. It proposes that the stress effects, due to oxide deformation, slow down the NC oxidation rate and lead to a self-limiting oxide growth. The model predictions show a good agreement with the experimental results. Soft oxidation appears to be a powerful way for manipulating the NC size distribution and surface density.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
