Abstract
Synchrotron radiation photoelectron spectroscopy (SR-PES) and crystal truncation rod (CTR) scattering profiles were used to investigate an ultrathin SiO2 overlayer on a Si(001) surface formed by a 5eV O-atom beam at room temperature. The SR-PES spectra indicated that the suboxides in the O-atom-beam oxidized film were concentrated on the SiO2 surface rather than at the Si∕SiO2 interface. The CTR scattering data of the O-atom-beam oxidation film had a lower intensity near (11L) (0.3<L<0.8), suggesting a lower content of the SiO2 ordered structure in the oxide film. An inverse diffusion of the interstitial Si atoms in the oxidation kinetics can explain the data.
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