Oxidation of etched silicon in air at room temperature; Measurements with ultrasoft X-ray photoelectron spectroscopy (ESCA) and neutron activation analysis

Abstract

The oxide growth rate for p-type Si<100> crystals after HF etching in air at room temperature was measured for exposures betwen 3 min and ≈ 10 3 min after etching. The oxide thicknesses were determined with traditional Al K α excited XPS and two nontraditional methods — especially suited for very thin layers: Zr M ζ excited XPS and neutron activation analysis (NAA). The oxide thicknesses (mainly SiO x with x < 2) lie between 0.1 and 0.55 nm with a logarithmic growth rate of ≈ 0.2 nm/decade.