Abstract
In this work we intend to determine whether the SiO 2 6HSiC(0001) interface is really carbon enriched. Among numerous publications dealing with 6HSiC oxidation, our specificity resides in a simultaneous use of ultra-high vacuum surface cleaning and characterization methods (X-ray spectroscopy) and standard technological conditions for the oxidation i.e. dry oxidation at 1 atm of O 2 and a temperature of 1000°C. The oxidation of 3×3 Si-rich and 6 √ 3 × 6 √ 3R30° C-rich reconstructed surfaces is compared, taking care to transfer the samples without uncontrolled air exposures. No CC or CO bonds are observed at the SiO 2 SiC interface by C 1s core line analyses whatever the initial surface is. We conclude that there is no contraindication to obtain nearly ideal SiO 2 SiC interfaces on flat SiC terraces.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
