Abstract
We deposited ultra thin TiN films with thickness as small as 5-40 nm using an advanced ion-plating (AIP) methods. The films showed a slight resistivity increase in air. In this paper, we investigated the mechanism of the resistivity increase by using x-ray photoelectron spectroscopy (XPS) measurements. We found that the TiN film after 1000-hour exposure to air was the mixture of TiN, intermediative TiO x N y and TiO 2 . We thus supposed that tile resistivity increase was mainly due to high-resistivity oxidized species. We concluded that the structural change proceeded in two steps in the ultra thin TiN film: TiO x N y compounds were formed uniformly over the entire region of the film prior to the TiO 2 formation.
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