Abstract
Oxidation mechanism of TiB2 particle dispersed SiC (TiB2/SiC) was studied by microstructural analysis and the oxidation protection by using SiC-CVD coating was tested. The microstructural observation and element analysis by transmission electron microscope indicated that Ti existing at the grain boundary between TiB2 particle and SiC particle of TiB2/SiC was oxidized selectively at early oxidation stage. TiB2/SiC was suggested to be oxidized further because the oxidation products providing O2 diffusion path. The oxidation resistance of TiB2/SiC was successfully improved by SiC-CVD coating because the coating on TiB2/SiC was thought to restrain the O2 diffusion by the formation of thin SiO2 layer, the oxidation product of SiC-CVD coating
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.