Abstract

The reaction of oxygen with silicon surfaces is of great fundamental and technological interest. In this paper, we report on laser-induced thermal desorption (LITD), temperature programmed desorption (TPD) and Fourier Transform Infrared (FTIR) experiments (1,2) that were used to investigate the kinetics of both the fast and slow steps in the oxygen adsorption process. These studies allowed the initial reactive sticking coefficient of oxygen on Si (111) 7x7 to be measured as a function of surface temperature. In addition, the kinetics of the slow adsorption step were studied on both Si (111)7x7 and porous silicon versus surface temperature.

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.