Abstract
Tin oxide was the first transparent conductor to have achieved significant commercialization. SnO2 is an n-type semiconductor with an optical band gap of about 3.6 eV in poly crystalline form. One of the main reasons for the wide use is its rather desirable characteristic of having both, high optical transmittance and high electrical conductivity. Under optimum deposition conditions, tin oxide crystallizes in the tetragonal (rutile) structure. In this study, nano crystalline thin oxide conductive thin films has been manufactured by thermal evaporation techniques onto steel substrates using metallic tin targets and oxidation kinetics have been studied after D.C. plasma oxidation by using XRD (X-Ray Diffraction). The activation energy of SnO and SnO2 from Sn phase transformations has also been studied.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
