Abstract
Thin films of laser formed MoSi2 on polycrystalline silicon were oxidized in either dry or wet O2. These films were oxidized in dry O2 at temperatures of 808–1104 °C for times that ranged from 0.5–42 h, and in wet O2 at 800° to 1000 °C for 0.5–2 h. For both oxidation conditions, the growth of SiO2 on the silicide surface is parabolic with time. Activation energies for the dry and wet processes have been measured to be 1.6 and 1.3 eV, respectively. As the oxidation proceeds and the underlying silicon decreases in thickness, the phase remains as MoSi2. However, upon complete consumption of the underlying silicon, the MoSi2 phase transforms to Mo3Si.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
