Abstract
We compared oxidation kinetics on Ge-covered Si(100) surfaces grown at 350 and 600°C for 0.9 and 2.0 ML Ge overlayer thicknesses. The OKLL intensities showed clear oxidation enhancement on the surfaces grown at 600°C. The oxygen interaction for the surface covered with 2 ML Ge formed at 350°C was weaker than for the Ge(100) surface, indicating that the compressive strain due to the lattice mismatch may suppress the oxygen interaction with surface Ge dimers.
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