Abstract
Abstract Oxidation-induced defects in trench-etched silicon crystals have been investigated by cross-sectional transmission electron microscopy. Trenches are aligned either along the 〈110〉 or the 〈100〉 directions lying in the (001) plane and have been wet oxidized at 850 and 1100°C. When protrusions are present on trench sidewalls, dislocations associated with precipitate colonies and stacking faults are observed after oxidation at 850 and 1100°C respectively; this result is independent of the trench orientation. Arguments have been developed to rationalize these observations.
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