Abstract
The oxidation of Si in air and in the temperature range from 570 to 1140 °C has been studied by Fourier Transform Infrared (FTIR) spectroscopy and X-Ray Reflectivity (XRR) measurements. The thickness, density, and roughness of the formed silicon oxide layers were determined by XRR measurements, whereas FTIR spectra assess the bond structure of the oxide. The thermal oxidation kinetics of crystallized Si in air is described well by the oxidation model of Deal and Grove in both the thin and the thick oxide layer regimes. The kinetic constants and the activation energies for diffusion and interface reaction have been determined and discussed in conjunction with theoretical calculations.
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