Oxidation Behavior of Ti1-xAlxN Barrier Layer for Memory Devices

Abstract

<TEX>$Ti_{1-x}$</TEX> <TEX>$Al_{ x}$</TEX>N thin films as barrier layer for memory devices application were deposited by reactive magnetron sputtering. The crystallinity, micro-structure, oxidation resistance and oxidation mechanism of films were investigated as a function of Al content. Lattice parameter and grain size of thin films were decreased with increasing the Al content Oxidation of the film with higher Al content is slow and then, total oxide thickness is thinner than that of lower Al content film. Oxide layer formed on the surface is AlTiNO layer. Oxidation of <TEX>$Ti_{1-x}$</TEX> /<TEX>$Al_{x}$</TEX> N barrier layer is diffusion limited process and thickness of oxide layer with oxidation time increased with a parabolic law. The activation energy of oxygen diffusion, Ea and diffusion coefficient, D of <TEX>$Ti_{0.74}$</TEX> /X<TEX>$0.74_{0.26}$</TEX>N film is 2.1eV and <TEX>$10^{-16}$</TEX> ~<TEX>$10^{-15}$</TEX> <TEX>$\textrm{cm}^2$</TEX>/s, respectively. <TEX>$_Ti{1-x}$</TEX> /<TEX>$Al_{x}$</TEX> XN barrier layer showed good oxidation resistance.