Abstract
In the present work, the oxidation behavior of the SiC layer of TRISO particles in NaF salt at concentrations of 0.2–2 % and at temperatures ranging between 800 and 1400 °C was studied. The results showed that the oxidation rate was accelerated with the increase in temperature and fluoride concentration, while the effect of fluoride concentration on oxidation rate was much greater than that of the temperature. This could be due to the reaction of fluoride with SiC/SiO2 and the dissolution of silicon oxide by the alkaline silicate formed during the oxidation process, which accelerated the diffusion of oxygen.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
