Oxidation Behavior of CVD and Single Crystal SiC at 1100°C

Abstract

High purity chemical vapor deposition (CVD) silicon carbide fabricated by a commercial process was examined and oxidized at 1100°C along with high purity single crystal silicon carbide. The freestanding CVD thick films had a highly textured polycrystalline microstructure, with the <111> directions of the crystals parallel to the growth direction. This texturing maintained the polarity of the 4¯3m crystal structure, implying that either the [111] or the [1¯1¯1¯] direction grew significantly faster during the CVD process. The (1¯1¯1¯) face of the cubic, oxidized at the same rate as the (0001¯) face of the single crystal . The (111) face of the oxidized at nominally the same rate as the (0001) face of the single crystal .