Ovonic threshold switching device and its application to logic gate function and steep slope in field effect transistors

Abstract

We report the poly(p-vinylphenol) (PVP)-based ovonic threshold switching devices. By optimizing the effective device area of the PVP-based device, low threshold voltage and low threshold voltage variation were achieved. By changing the compliance current to affect the strength of the conductive filaments, the threshold switching characteristics of the devices were tested at four different compliance currents of 1 × 10−4 A, 5 × 10−5 A, 1 × 10−5 A, 5 × 10−6, the results show that the lower the limiting current, the lower the on state current. The PVP-based device is used in the design of logic gates to realize the function of “AND” and “OR”. Furthermore, a steep slope FET was realized by connecting the PVP based device in series to the gate electrode of the graphene oxide-field effect transistor. The proposed device achieves an extremely low subthreshold swing of 23.7 mV/decade and a high on-off ratio of∼105 due to the steep switching of the threshold switching device at the gate region.