Overview of the assembly and packaging of wide band gap semiconductor technologies

Abstract

This paper summarizes the development of the third-generation semiconductors, which are also named Wide - Band-Gap(WBG) semiconductor, typified by SiC, GaN. Since the power devices based on the WBG semiconductor should be operated on harsh environments with high temperature and high frequency, the assembly and packaging should also withstand such environment. The technology of die-attachment and interconnection technologies suitable for these power devices are presented in this paper. Through the comparison of several advanced corporations' power devices, prudent technology to achieve a full comprehension in this market. The focus discussion is the roadmap of package technologies in the power devices based on the WBG semiconductors. And finally, further anticipation for future developments of the package technology in such applications is given.