Abstract
Abstract This paper reviews the status of silicon carbide power electronics. Results on SiC high voltage rectifiers and thyristors are summarized. Current issues in silicon carbide power devices are discussed, including the small device area and high base region resistance of the devices. It is shown that micropipes are not the defects that limit SiC device area. It is some other defects which cause a premature breakdown. To overcome these problems, liquid phase epitaxial growth for high power SiC devices is proposed.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
