Abstract
The flat panel display (FPD) market has been experiencing a rapid transition from liquid crystal (LC) to organic light emitting diode (OLED) displays, leading, in turn, to the accelerated commercialization of OLED televisions already in 2013. The major driving force for this rapid change was the adaptation of novel oxide semiconductor materials as the active channel layer in thin film transistors (TFTs). Since the report of amorphous-InGaZnO (a-IGZO) semiconductor materials in 2004, the FPD industry has accelerated the development of oxide TFTs for mass-production. In this review, we focus on recent progress in applying electro-ceramic materials for oxide-semiconductor thin-film-transistors. First, oxide-based semiconductor materials, distinguished by vacuum or solution processing, are discussed, with efforts to develop high-performance, cost-effective devices reviewed in chronological order. The introduction and role of high dielectric constant - reduced leakage gate insulators, in optimizing oxide-semiconductor device performance, are next covered. We conclude by discussing current issues impacting oxide-semiconductor TFTs, such as field effect mobility and device stability and the proposed directions being taken to address them.
Highlights
Oxide semiconductors have, in recent years, become the focus of extreme interest for emerging electronic applications, such as flexible and transparent displays [1–5]
We report on recent developments in amorphous oxide semiconductors (AOSs) thin film transistors (TFTs) devices that address several major issues including the nature of the semiconducting oxides, gate insulators, and device instability
Before focusing on the issues related to the choice and optimization of the oxide semiconductor and dielectric materials, we briefly review the TFT and its operating characteristics to aid readers less familiar with this technology
Summary
In recent years, become the focus of extreme interest for emerging electronic applications, such as flexible and transparent displays [1–5]. After the Hosono group reported the ‘amorphous indium gallium zinc oxide’ (a-IGZO) semiconductor in 2004 [11], amorphous oxide semiconductors (AOSs) were rapidly adopted as the channel layer in flexible and transparent TFTbased electronic devices. They have since been taking the place of a-Si and LTPS, given several key qualities, including high electrical mobility, amorphicity, and high optical transparency. We report on recent developments in AOS TFT devices that address several major issues including the nature of the semiconducting oxides, gate insulators, and device instability. We introduce recent progress in minimizing device instability of AOS TFTs under gate bias, temperature, and illumination
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