Overview of Different Technologies for Multiple-Valued Memory

Abstract

The state-of-the-art binary logic and memory applications and computational devices are primarily based on Metal–Oxide–Semiconductor Field-Effect Transistor (MOSFET) technology. Recently, a couple of improved versions of the planar MOSFET technology have been introduced for commercial use. These two lower-node technologies are Fin Field Effect Transistor (FinFET) and Fully Depleted Silicon on Insulator (FDSOI), which offer lower short-channel effects and improved gate-channel control. The initial research works on the Multivalued Logic (MVL) were based on the conventional MOSFET technology. Gradually, newer device technologies are introduced in the research arena of the multivalued logic and memory circuits. This chapter presents a brief overview of prior and current research on MVL circuits based on the conventional and emerging device technologies. Each section contains a short description of a specific technology and some discussion on the advantages and challenges of implementing MVL circuits utilizing that technology. The list of technologies that are highlighted covers conventional silicon devices, carbon-nanomaterial based technologies, magnetic devices, and the perceived new electrical element like memristor.