Abstract
The effect of charge-carrier overheating in a two-dimensional (2D) hole gas is realized in a Si1−xGex quantum well, where x=0.13, 0.36, 0.8, or 0.95. The Shubnikov–de Haas (SdH) oscillation amplitude is used as a “thermometer” to measure the temperature of overheated holes. The temperature dependence of the hole-phonon relaxation time is found from an analysis of the change of the dependence of the amplitude of the SdH oscillations on temperature and applied electrical field. Analysis of the temperature dependence of the hole-phonon relaxation time reveals a transition of the 2D system from the regime of “partial inelasticity” to conditions of small-angle scattering.
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