Abstract
A detailed study of the regrowth of (AlGa)As over trenches etched into (InGa)P, an important step in the fabrication of index-guided laser structures, is presented. The resulting Al concentration profile depends on the growth conditions in metalorganic vapor-phase epitaxy and on the trench orientation. While for [0 −1 1]-oriented trenches the V/III ratio strongly affects the Al profile, no influence is observed for [0 1 1]-trenches. The observed dependencies are explained from the different As coverage of the different growth facets and the resulting Ga-diffusion towards the sidewalls of the trenches.
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