Abstract
The rapid advancement of flexible optoelectronic devices, such as light-emitting diodes, solar cells, and electrochromic devices, necessitates the development of high-performance flexible transparent electrodes (TEs). Dielectric/metal/dielectric (DMD)-type TEs are promising alternatives to conventional indium tin oxide (ITO) due to the high electrical conductance, excellent visible transparency, and sufficient mechanical flexibility. However, the tradeoff between electrical conductance and visible transparency poses a challenge to performance enhancement. This study introduces an Ar-ion-mediated interface modification method to address this tradeoff by dual smoothing of dielectric/metal interfaces in TiOx/Cu/ZnO TEs. Implementing this dual smoothing methodology significantly enhances both electrical conductance and visible light transmittance, achieving a Haacke figure of merit 200% higher than that of an unmodified otherwise identical structure. The highest figure of merit is 0.113 Ω-1, a record high for Cu-thin-layer-based DMD TEs, far surpassing ITO electrode values. Further, the enhanced optoelectronic performance remains highly durable under severe and simultaneous electrical, thermal, and mechanical stresses, showcasing the potential for significant advances in flexible optoelectronics.
Published Version
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