Abstract
Sub-threshold slope degradation is one of the difficulties preventing microchip scaling. This paper mainly concentrates on sub-threshold region of MOSFET and introduces the definition of sub-threshold swing (inverse of sub-threshold slope). The reason for this work is also told. Basing on ideal assumptions, the work considers 8 influence factors of sub-threshold. After comparison, high-k material, lower doping density, higher bias voltage and more ideal surface are good ways to solve the problem. Changing work function is conditional. The result is meaningful for further understanding of sub-threshold region and further scaling-down.
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