Abstract
Whereas the mismatch law of area [1] and law of distance [2] are acceptable in a first order sense, there a several measurement results which show significant deviations from these simple models. This paper describes a more sophisticated approach to mismatch modeling, based on spatial frequencies on the wafer. This makes it possible to overcome the insufficiencies of the first order modeling and to achieve a generalized representation of mismatch effects. A method for determining the spatial spectrum from measurement data is presented.
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