Abstract
We report the experimental work on the GaAs metal-semiconductor-metal photodetectors with recessed cathode and/or anode. The recessed-cathode detectors exhibit much superior dc and speed performance to the conventional one because of the enhancement of hole transport in this structure. Full-width at half-maximum and fall time of the temporal response were measured to be 21 and 13 ps at 5 V bias on a 50×50 μm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> detector with a finger width and spacing of 3 μm.
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