Abstract
This paper describes an L-band partially-matched GaN HEMT for space applications. A 200W GaN HEMT incorporated two 100W dies achieved 71% power-added efficiency, 74.6% drain efficiency at 1.58GHz under CW operating conditions. We have also completed space qualification test for this GaN HEMT technology and it showed excellent reliability under high temperature and RF overdrive conditions. The result of this qualification satisfied all the reliability and lifetime requirements for space applications. To the best of our knowledge, the efficiency of 74.6% is the highest of L-Band 200W class GaN HEMT. We also showed the feasibility of GaN HEMT SSPA for space applications.
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