Abstract
Reported is a design methodology to efficiently control source and load impedances of a power GaN HEMT at the second-harmonic frequency inside a metal ceramic package. Second-harmonic source control is more precisely investigated. A specific filter is implemented at the gate side within the package to transform external source impedances into negative reactances seen by the internal device at second-harmonic frequencies. Whatever the external source termination presented at second-harmonic frequencies, source impedances seen by the internal die are confined to high efficiency regions. This methodology is applied to a 20 W packaged GaN HEMT using internal control of input and output second-harmonic impedances to reach more than 70% of power-added-efficiency (PAE) on 30% relative bandwidth in S-band.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
