Abstract
A distributed III-V-on-Si electroabsorption modulator based on an asymmetric segmented electrode has been developed on the hybrid silicon platform for the 1.3 μm transmission window. The measured modulation response shows a 2 dB drop at 67 GHz and an extrapolated 3 dB bandwidth of 74 GHz. Large signal measurements show clearly open eye diagrams at 50 Gb/s. An extinction ratio of 9.6 dB for back to back transmission and an extinction ratio of 9.4 dB after 16 km transmission were obtained with a drive voltage of 2.2 V.
Highlights
IntroductionSilicon photonics is an interesting research direction due to the possibility of high quality, low cost and high volume production of photonic integrated circuits (PICs) in CMOS foundaries, as well as the potential for low power, high capacity interconnects on future electronicphotonic integrated circuits (EPICs)
Silicon photonics is an interesting research direction due to the possibility of high quality, low cost and high volume production of photonic integrated circuits (PICs) in CMOS foundaries, as well as the potential for low power, high capacity interconnects on future electronicphotonic integrated circuits (EPICs).Pushing silicon PICs to a higher speed is desirable for many applications that need large capacity data transmission or long distance delivery of the microwave signal
With this hybrid silicon technique, the hybrid silicon modulator can be integrated with high performance semiconductor lasers [9] and high speed photodetectors [10], and enable the feasibility of complex on-chip photonic submodules and systems on silicon substrates, e.g., the hybrid silicon transmitter, similar to those developed on the InP substrate [11,12,13]
Summary
Silicon photonics is an interesting research direction due to the possibility of high quality, low cost and high volume production of photonic integrated circuits (PICs) in CMOS foundaries, as well as the potential for low power, high capacity interconnects on future electronicphotonic integrated circuits (EPICs). To date the highest speed modulators on silicon were achieved by transferring a III-V epitaxy stack to an SOI wafer to realize a hybrid silicon electroabsorption modulator with 42 GHz bandwidth [8]. With this hybrid silicon technique, the hybrid silicon modulator can be integrated with high performance semiconductor lasers [9] and high speed photodetectors [10], and enable the feasibility of complex on-chip photonic submodules and systems on silicon substrates, e.g., the hybrid silicon transmitter, similar to those developed on the InP substrate [11,12,13]. The improvement mainly comes from two aspects: first, an asymmetric segmented transmission line has been designed as the distributed electrode configuration [11, 14,15,16] to reduce the microwave reflection and improve the modulation bandwidth; second, we utilize a new InAlGaAs quantum well stack and shift the operation wavelength of the modulator to the 1.3 μm transmission window for datacom applications
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