Abstract
Over 65% efficiency 300MHz bandwidth C-band internally-matched GaAs FET has been developed by using a large-signal FET model. In order to achieve high efficiency in broad-band, optimum impedances at each frequency are estimated by using the large-signal FET model. The large-signal FET model is based on Angelov model. The capacitance equations of the model are improved to satisfy charge conservation. The model parameters are extracted for a unit cell FET with a small gate width. The unit cell FET model was scaled up to one chip FET model with a wide gate width, considering increase of source inductance by sharing via holes. The developed C-band internally-matched FET has achieved power-added efficiency (PAE) of over 65% across 300MHz bandwidth.
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