Abstract
We demonstrated the operation of GaN-on-Si metal–oxide–semiconductor field effect transistors (MOSFETs) for power electronics components. The interface states at SiO2/GaN were successfully improved by annealing at 800°C for 30min in N2 ambient. The interface state density was less than 1×1011cm–2eV−1 at Ec−0.4eV. The n+ contact layers as the source and drain regions as well as the reduced surface field (RESURF) zone were formed using a Si ion implantation technique with the activation annealing at 1200°C for 10s in rapid thermal annealing (RTA). As a result, we achieved an over 1000V and 30mA operation on GaN-on-Si MOSFETs. The threshold voltage was +2.6V. It was found that the breakdown voltage depended upon the RESURF length and nitride based epi-layer thickness. In addition, we discussed the comparison of each performance of GaN-on-Si with -sapphire devices.
Published Version
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