Abstract
We investigated the structure and magneto-transport properties of magnetic tunnel junctions (MTJs) consisting of half-metallic Co2FeGa0.5Ge0.5 ferromagnetic electrodes and a semiconductive CuGaSe2 interlayer. The magnetoresistance (MR) ratio reaches more than 100% at room temperature and nearly 250% at 30 K with the resistance area product (RA) smaller than 1 Ω μm2. Microstructural analysis clarified that Co and Fe atoms diffuse into the CuGaSe2 layer, which can be a possible reason for the scattering of RA values but poorly affect the MR ratio itself. Our findings stress the potential of semiconductor barriers in MTJs for spintronics application that requires low RA.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callSimilar Papers
More From: Applied Physics Letters
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
