Over 1 kV Vertical GaN-on-GaN p-n Diodes With Low On-Resistance Using Ammonia Molecular Beam Epitaxy

Abstract

Vertical GaN-on-GaN p-n diodes grown by ammonia molecular beam epitaxy (NH <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> MBE) are reported in this letter for prospective high-power application devices. The diodes, consisting of only 4 μm drift layer with low unintentionalbackgrounddoping of ~ 3×10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">15</sup> cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-3</sup> , showed a maximum breakdown voltage of >1.0 kV and a low differential specific on-resistance of 0.28 mΩ-cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> . Moreover, these diodes exhibited an excellent rectifying behavior with a low minimum ideality factor of 1.36 and a punch-through electric field comparable to the state-of-the-art vertical GaN-on-GaN p-n diodes grown by metalorganic chemical vapor deposition (MOCVD). These results suggest that all-MBE vertical GaN-on-GaN p-n diodes grown by NH <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> MBE can be promising for small-size high-power electronic devices.