Abstract
We investigate inductively coupled plasma deep dry etching of Al0.8Ga0.2As for photonic crystal (PC) fabrication using the Cl2, BCl3, and CH4 mixture. On the basis of our previous work [M. Mochizuki et al.: Jpn. J. Appl. Phys. 50 (2011) 04DG15], we explore the deeper dry etching of the PC structure, investigating the impact of gas flow rate and chemical reactions. Increasing gas flow rate and process pressure resulted in deeper etching. These conditions increased the self-bias applied on the sample, which induced the sharpening of the air hole bottom and limitation of further deep etching because of the strong contribution of physical etching. The reduction of CH4 gas suppressed the sidewall passivation, counteracting the effect of the physical etching. As a result, we obtained a PC structure having air holes with a depth larger than 1.5 µm and a diameter of 120 nm.
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