Abstract
The transport of deposited atoms and substrate atoms during dynamic ion mixing was investigated by Auger electron spectroscopy (AES). Mild steel substrates were treated by dynamic ion mixing, in which Ne, Ar or Kr ion implantation and Ti deposition were carried out simultaneously. Before the treatment, Ta markers were embedded in the surface region of the steel by Ta ion implantation in order to confirm the location of the original substrate surface. The distance of outward transport of Fe atoms (ΔFe) gradually exceeds that of the inward transport of Ti atoms (ΔTi) as the ion/atom arrival ratio (i.e. the ratio of impacting ions to condensing atoms) increases. The same Δ Fe Δ Ti ratio is attained with a lower ion/atom arrival ratio when the ion mass is larger and ion energy is lower, i.e. when the sputter yield of the ion implantation is larger. The outward transport of substrate atoms is thought to be caused by the reaction of the sputtered Fe atoms the depositing Ti atoms during the process.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
