Output Properties of Transparent Submount Packaged FlipChip Light-Emitting Diode Modules

Preetpal Singh,Chih-Teng Hou,Chao-Sung Lai,Liann-Be Chang,Der-Hwa Yeh,Cher-Ming Tan,Ting-Yu Chao

doi:10.3390/app6060179

Abstract

Flip chip technology has been widely adopted in modern power light-emitting diode (LED) fabrications and its output efficiency is closely related to the submount material properties. Here, we present the electrical, optical and thermal properties of flip chip light-emitting diodes mounted on transparent sapphire and borosilicate glass which have shown a higher output luminous flux when compared to the traditional non-transparent mounted LEDs. Exhibiting both better thermal conductivity and good optical transparency, flip chip LEDs with a sapphire submount showed superior performance when compared to the non-transparent silicon submount ones, and also showed better optical performance than the flip chip LEDs mounted on transparent but poor-thermal-conducting glass substrates. The correspondent analysis was carried out using ANSYS 14 to compare the experimental thermal imaging with the simulation results. TracePro software was also used to check the output luminous flux dependency on different LED mounting designs.

Highlights

The light-emitting diode (LED) efficiency and manufacturing cost are the key issues to affect the commercialization share of solid-state lighting
2015)non‐transparent is used to simulate the light efficiency of our proposed mounting of FCLED submount, samples mounted on differentitsubstrates, Afterwards, resultsmounting are used on a transparent and compares with that respectively
It was observed that FCLEDs mounted on the double side burnish (DSB) sapphire submount had the highest lumens at 150 mA and the LEDs mounted on the silicon exhibited the lowest output values

Summary

Introduction

The LED efficiency and manufacturing cost are the key issues to affect the commercialization share of solid-state lighting. Si [18,19,20,21,22,23,24,25] Despite all these very challenging to grow high quality GaN-based LEDs directly on Si due to the large mismatch in disadvantages of silicon, in this work we use it as a traditional non‐transparent reference submount lattice constants and the thermal expansion coefficients between GaN and Si [18,19,20,21,22,23,24,25]. Despite all these material due to its easy processing characteristics. Disadvantages of silicon, in this work we use it as a traditional non-transparent reference submount material due to its easy

Experimental

Results and Discussions

Conclusions