Abstract
L'Investigation tralte de la relation entre brult g-r et la dispersion de frequence de I'impedance de sortle GaAs MESFET. On a employe une nouvelle technique pour I'identification des nlveaux profonds qui sont responsable du brult et de la dispersion. La dependance du bials de la dispersion fut egalement investiguee et un modele constant aux simulations en deux dimensions est presente. The interrelation between g-r noise and output impedance frequency dispersion in GaAs MESFET's has been investigated. A new technique to identify the deep levels responsible for the dispersion is used. It is found that same traps are responsible for both noise and dispersion. The bias dependence of the dispersion was also investigated and a model is presented which is consistent with 2-D simulations.
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