Abstract
We report out-diffusion experiments of Zn from homogeneously Zn-doped Si samples which were performed at 1107 °C. Depth distributions of Zn recorded by spreading-resistance profiling are accurately described on the basis of simultaneous contributions of the kick-out and dissociative diffusion mechanism. Analysis of the profiles reveals that Zn out-diffusion is mainly mediated by the dissociative mechanism. Fitting of Zn profiles yields data for the transport capacity of vacancies CVeqDV in Si and their thermal equilibrium concentration CVeq.
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