Abstract
Ferroelectric ultrathin film with stable out-of-plane spontaneous polarization is important for the miniaturization of electronic devices. The macroscopic spontaneous polarization and photoelectricity for SiSn monolayer have been investigated in terms of first principles calculation. The results show that a considerable out-of-plane spontaneous polarization with appropriate switching barriers and high carrier mobilities present in monolayer SiSn, and the applied strain can not only effectively enhance spontaneous polarization, but also improve the near-infrared absorption. These results reveal monolayer SiSn is a promising candidate material of ferroelectric ultrathin film and a superior photoelectricity film.
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