Abstract
A new MEMS for on-chip mechanical testing of 0.9 /spl mu/m thick polysilicon film has been designed, modelled and fabricated. The polysilicon film is electrostatically loaded under bending until rupture in the out of plane direction, by means of electrostatic attraction in the direction orthogonal to the substrate. This is at difference with previous works of the same authors, in which results relevant to in plane loading conditions have been presented. 3D finite element (FE) and boundary element (BE) models of the structure were used during the design and data reduction phases. Tests were carried out at room temperature and at atmospheric humidity. The measured Young modulus of the tested polysilicon was 169 /spl plusmn/ 11 GPa. Rupture stress computed after the application of Weibull theory was 5669 MPa, with a Weibull modulus m = 22.5.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
