Abstract
Deep level centers in LEC-grown semi-insulating InP before and after 60 keV proton or N+2 ion irradiation and thermal annealing have been characterized by means of an optical transient current spectroscopy (OTCS) and their effects on resistivity are comparatively investigated. Two centers with activation energies of 0.31 and 0.65 eV were resolved in the substrate. It was found that ion irradiation induced a defect center with an activation energy of 0.19 eV and thermal annealing at 500 C and above induced two centers with activation energies of 0.45 and 0.81 eV. The decrease of resistance observed after these treatments is shown to be explained from the behavior of induced center.
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