Abstract
The kinetical behavior of Ge nanoparticles synthesized in SiO 2 by ion implantation and annealing has been studied by transmission electron microscopy and electron energy loss spectroscopy measurements. The combination of both techniques allows to develop a new method for simultaneous evaluation of the main parameters of the nanoparticles distribution (density and size) in an amorphous matrix. The number of Ge atoms contained within the precipitates, as deduced from these parameters, agrees with the Ge content in the implanted layer as measured by secondary ion mass spectroscopy (SIMS), which gives confidence on the proposed method. The obtained results indicate the existence of a conservative Ostwald ripening process. Finally, the activation energy for the precipitate growth has been deduced from the data.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
