Abstract
The resistivity and Hall coefficient of gated n-InAs epilayers have been measured at low temperatures utilizing differential techniques and a magnetic field swept from zero to six tesla. When the InAs surface is in accumulation, three distinct series of oscillations, periodic in inverse magnetic field, are observed. These series are interpreted as the quantization of the surface electron energies into three subbands. The densities of these subbands are roughly linear in applied gate voltage and vanish as one approaches flatband. The temperature and magnetic field dependences of the oscillation amplitudes suggests an effective mass of 0.04 m e and a Dingle temperature of 26 K.
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