Abstract
A new oscillatory phenomenon is observed in the magneto-capacitance between the high mobility two-dimensional electron gas in a GaAs/AlGaAs heterostructure and a metal grid gate of 200nm periodicity. The observed minima reflect the minima in the density-of-states of Landau bands resulting from removal of the Landau level degeneracy by the grid gate potential. A model calculation is carried out and the results agree with the experimental observation.
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