Abstract
We experimentally study the tunneling magnetoresistance (TMR) effect as a function of bias voltage $({V}_{\mathrm{SD}})$ in lateral $\mathrm{Ni}∕\mathrm{In}\mathrm{As}∕\mathrm{Ni}$ quantum-dot (QD) spin valves showing Coulomb blockade characteristics. With varying ${V}_{\mathrm{SD}}$, the TMR value oscillates and the oscillation period corresponds to conductance changes observed in the current-voltage $(I\text{\ensuremath{-}}{V}_{\mathrm{SD}})$ characteristics. We also find an inverse TMR effect near ${V}_{\mathrm{SD}}$ values where negative differential conductance is observed. A possible mechanism of the TMR oscillation is discussed in terms of spin accumulation on the QD and spin-dependent transport properties via excited states.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
