Abstract
New accurate results are presented for absorption oscillator strengths of Si II resonance lines. In these ab initio calculations, an extensive basis set of 67 electronic configuration are employed, including fine-structure states and relativistic effects in the Breit-Pauli approximation. For the strong Si II lines, good agreement is found with previous LS-coupling f-values of Dufton et al. (1983). Oscillator strengths of selected weaker lines disagree in some cases with empirically determined f-values by Shull, Snow, and York (1981) and by Van Buren (1986). The theoretical results are combined with curve-of-growth analyses of Copernicus and IUE data to yield a list of recommended Si II oscillator strengths consistent with the errors in both theoretical and observational analyses. These f-values have been used (Van Steenberg and Shull) for a Galactic survey of interstellar silicon abundances with the International Ultraviolet Explorer satellite.
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