Abstract
Oscillations in the diffusion thermopower of a GaAs/Ga 1−xAl xAs heterojunction have been clearly observed for the first time. Phonon drag has been strongly reduced by growing the 2DEG on a heavily-doped conducting substrate and by working below 1 K. The low-field oscillations in the Nernst-Ettingshausen coefficient have been investigated and are found to show the unique thermal damping factor of diffusion.
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